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BSH111
N-channel enhancement mode field-effect transistor
M3D088
Rev. 02 -- 26 April 2002 Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM technology.
Product availability:
BSH111 in SOT23.
2. Features
s TrenchMOSTM technology
s Very fast switching
s Low threshold voltage
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
s Logic level translator.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
3 d
2 source (s)
3 drain (d)
g
1 2 MBB076 s
Top view MSB003
SOT23
Philips Semiconductors BSH111
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) 25