Philips bsh111 free download

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BSH111 N-channel enhancement mode field-effect transistor M3D088 Rev. 02 -- 26 April 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: BSH111 in SOT23. 2. Features s TrenchMOSTM technology s Very fast switching s Low threshold voltage s Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Logic level translator. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 1 2 MBB076 s Top view MSB003 SOT23 Philips Semiconductors BSH111 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) 25