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AOD412
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AOD412 uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON), low gate chargeand low ID = 85A (VGS = 10V)
gate resistance. This device is ideally suited for use RDS(ON) < 7.0m (VGS = 10V)
as a high side switch in CPU core power conversion. RDS(ON) < 10.5m (VGS = 4.5V)
Standard Product AOD412 is Pb-free (meets ROHS
& Sony 259 specifications). AOD412L is a Green
Product ordering option. AOD412 and AOD412L are
electrically identical.
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G D S
Absolute Maximum Ratings TA=25