Various AOD412 free download

File name AOD412.pdf

AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate chargeand low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) < 7.0m (VGS = 10V) as a high side switch in CPU core power conversion. RDS(ON) < 10.5m (VGS = 4.5V) Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications). AOD412L is a Green Product ordering option. AOD412 and AOD412L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25