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STL23NM60ND
N-channel 600 V, 0.150 , 19.5 A, FDmeshTM II Power MOSFET
(with fast diode) PowerFLATTM (8x8) HV
Preliminary data
Features
VDSS
Type RDS(on) max ID
(@Tjmax)
STL23NM60ND 650 V < 0.180 19.5 A(1)
1. This value is rated according to Rthj-case.
The worldwide best RDS(on) * area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
High dv/dt and avalanche capabilities
Application Figure 1. Internal schematic diagram
Switching applications
Description
The FDmeshTM II series belongs to the second
generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order code Marking Package Packaging
STL23NM60ND 23NM60ND PowerFLATTM 8x8 HV Tape and reel
April 2010 Doc ID 17439 Rev 1 1/11
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 11
change without notice.
Contents STL23NM60ND
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits .............................................. 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11 Doc ID 17439 Rev 1
STL23NM60ND Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate-source voltage