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stl23nm60nd.pdfSTL23NM60ND N-channel 600 V, 0.150 , 19.5 A, FDmeshTM II Power MOSFET (with fast diode) PowerFLATTM (8x8) HV Preliminary data Features VDSS Type RDS(on) max ID (@Tjmax) STL23NM60ND 650 V < 0.180 19.5 A(1) 1. This value is rated according to Rthj-case. The worldwide best RDS(on) * area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities Application Figure 1. Internal schematic diagram Switching applications Description The FDmeshTM II series belongs to the second generation of MDmeshTM te

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