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2N7000
N-channel enhancement mode field-effect transistor
Rev. 03 -- 19 May 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM1 technology.
Product availability:
2N7000 in SOT54 (TO-92 variant).
2. Features
s TrenchMOSTM technology
s Very fast switching
s Logic level compatible.
3. Applications
s Relay driver
s High speed line driver
c
s Logic level translator.
c
4. Pinning information
Table 1: Pinning - SOT54, simplified outline and symbol
Pin Description Simplified outline Symbol
1 drain (d)
d
2 gate (g)
3 source (s)
g
03ab40
3 21 03ab30
s
SOT54 (TO-92 variant) N-channel MOSFET
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150