Philips 2n7000-03 free download

File name 2n7000-03.pdf

2N7000 N-channel enhancement mode field-effect transistor Rev. 03 -- 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features s TrenchMOSTM technology s Very fast switching s Logic level compatible. 3. Applications s Relay driver s High speed line driver c s Logic level translator. c 4. Pinning information Table 1: Pinning - SOT54, simplified outline and symbol Pin Description Simplified outline Symbol 1 drain (d) d 2 gate (g) 3 source (s) g 03ab40 3 21 03ab30 s SOT54 (TO-92 variant) N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors 2N7000 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 150