am81720-0.pdf part of ST am81720-0 am81720-0.pdf, . Electronic Components Datasheets Active components Transistors ST am81720-0.pdf text manual preview

Text preview for : am81720-0.pdf part of ST am81720-0 . Electronic Components Datasheets Active components Transistors ST am81720-0.pdf

Back to : am81720-0.pdf | Home

AM81720-012
RF & MICROWAVE TRANSISTORS
COMMUNICATIONS APPLICATIONS

.
. REFRACTORY/GOLD METALLIZATION

.
.
EMITTER SITE BALLASTED
RUGGIZED VSWR :1

.
.
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING

.
.
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 12 W MIN. WITH 7.4 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE BRANDING
AM81720-012 81720-12

PIN CONNECTION

DESCRIPTION
The AM81720-012 is designed specifically for Tele-
communications applications.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing
a refractory/gold metallization system.
The unique AMPACTM devices are housed in Her- 1. Collector 3. Emitter
metic Metal/Ceramic packages with internal
2. Base 4. Base
Input/Output matching structures.

ABSOLUTE MAXIMUM RATINGS (T case = 25