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STW8NB90
STH8NB90FI
N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218
PowerMeshTM MOSFET
TYPE VDSS RDS(on) ID

STW8NB90 900 V < 1.45 8A
STH8NB90FI 900 V < 1.45 5A
s TYPICAL RDS(on) = 1.1
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
3
s VERY LOW INTRINSIC CAPACITANCES 3
2
2
s GATE CHARGE MINIMIZED 1 1

DESCRIPTION TO-247 ISOWATT218
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW8NB90 STH8NB90FI
VDS Drain-source Voltage (VGS = 0) 900 V
VDGR Drain-gate Voltage (RGS = 20 k) 900 V
VGS Gate- source Voltage