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STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218 PowerMeshTM MOSFET TYPE VDSS RDS(on) ID STW8NB90 900 V < 1.45 8A STH8NB90FI 900 V < 1.45 5A s TYPICAL RDS(on) = 1.1 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 s VERY LOW INTRINSIC CAPACITANCES 3 2 2 s GATE CHARGE MINIMIZED 1 1 DESCRIPTION TO-247 ISOWATT218 Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STW8NB90 STH8NB90FI VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 k) 900 V VGS Gate- source Voltage