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KSE210 PNP EPITAXIAL SILICON TRANSISTOR
COLLECTOR-EMITTER SUSTAINING VOLTAGE
LOW COLLECTOR-EMITTER SATURATION TO-126
SATURATION VOLTAGE
HIGH CURRENT GAIN-BANDWIDTH
PRODUCT-MIN fT=65 IC= -100 { ~
Complement to KSE200
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector- Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter- Base Voltage VEBO -8 V
Collector Current IC -5 A
Collector Dissipation (T C=25) PC 15 W
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150 1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS )
(T C=25
Characteristic Symbol Test Condition Min Max Unit
Collector Emitter Sustaining Voltage VCEO(sus) IC = - 10mA, IB = 0 -25 V
Collector Cutoff Current ICBO VCB = -40V, IE = 0 -100 nA
VCB = - 40V, IE =0, T J = 125 -100 uA
Emitter Cutoff Current IEBO VBE = - 8V, IC = 0 -100 nA
DC Current Gain hFE VCE = - 1V, IC = - 500mA 70
VCE = - 1V, IC = - 2A 45 180
VCE = - 2V, IC = - 5A 10
Collector- Emitter Saturation Voltage VCE(sat) IC = - 500mA, IB = - 50mA -0.3 V
IC = - 2A, IC = - 200mA -0.75 V
IC = - 5A, IB = - 1A -1.8 V
Base- Emitter Saturation Voltage VBE(sat) IC = - 5A, IB = - 1A -2.5 V
Base-Emitter On Voltage VBE(on) VCE = - 1V, IC = - 2A -1.6 V
Current Gain- Bandwidth Product fT VCE = - 10V, IC = - 100mA,
f = 10MHz 65 MHz
Output Capacitance COB VCB = - 10V, IE = 0, f = 0.1MHz 120 pF
KSE210 PNP EPITAXIAL SILICON TRANSISTOR