Samsung kse210 free download

File name kse210.pdf

KSE210 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION TO-126 SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65 IC= -100 { ~ Complement to KSE200 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter- Base Voltage VEBO -8 V Collector Current IC -5 A Collector Dissipation (T C=25) PC 15 W Junction Temperature TJ 150 Storage Temperature T STG -65 ~ 150 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS ) (T C=25 Characteristic Symbol Test Condition Min Max Unit Collector Emitter Sustaining Voltage VCEO(sus) IC = - 10mA, IB = 0 -25 V Collector Cutoff Current ICBO VCB = -40V, IE = 0 -100 nA VCB = - 40V, IE =0, T J = 125 -100 uA Emitter Cutoff Current IEBO VBE = - 8V, IC = 0 -100 nA DC Current Gain hFE VCE = - 1V, IC = - 500mA 70 VCE = - 1V, IC = - 2A 45 180 VCE = - 2V, IC = - 5A 10 Collector- Emitter Saturation Voltage VCE(sat) IC = - 500mA, IB = - 50mA -0.3 V IC = - 2A, IC = - 200mA -0.75 V IC = - 5A, IB = - 1A -1.8 V Base- Emitter Saturation Voltage VBE(sat) IC = - 5A, IB = - 1A -2.5 V Base-Emitter On Voltage VBE(on) VCE = - 1V, IC = - 2A -1.6 V Current Gain- Bandwidth Product fT VCE = - 10V, IC = - 100mA, f = 10MHz 65