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Supertex inc. 2N6660
N-Channel Enhancement-Mode
Vertical DMOS FET
Features General Description
Free from secondary breakdown The Supertex 2N6660 is an enhancement-mode (normally-
Low power drive requirement off) transistor that utilizes a vertical DMOS structure and
Ease of paralleling Supertex's well-proven silicon-gate manufacturing process.
Low CISS and fast switching speeds This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input
Excellent thermal stability
impedance and positive temperature coefficient inherent
Integral source-drain diode
in MOS devices. Characteristic of all MOS structures, this
High input impedance and high gain
device is free from thermal runaway and thermally-induced
Hi-Rel processing available secondary breakdown.
Applications Supertex's vertical DMOS FETs are ideally suited to a wide
Motor controls range of switching and amplifying applications where very
Converters low threshold voltage, high breakdown voltage, high input
Amplifiers impedance, low input capacitance, and fast switching
Switches speeds are desired.
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
BVDSS/BVDGS RDS(ON) ID(ON)
Device Package (max) (min)
(V)
() (A)
2N6660 TO-39 60 3.0 1.5
TO-39 package is RoHS compliant (`Green').
Consult factory for die / wafer form part numbers.
Refer to Die Specification VF21 for layout and dimensions. Pin Configuration
Absolute Maximum Ratings
Parameter Value
GATE
Drain-to-source voltage BVDSS
SOURCE
Drain-to-gate voltage BVDGS
DRAIN
Gate-to-source voltage