Supertex 2n6660 free download

File name 2n6660.pdf

Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex 2N6660 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Ease of paralleling Supertex's well-proven silicon-gate manufacturing process. Low CISS and fast switching speeds This combination produces a device with the power handling capabilities of bipolar transistors, and the high input Excellent thermal stability impedance and positive temperature coefficient inherent Integral source-drain diode in MOS devices. Characteristic of all MOS structures, this High input impedance and high gain device is free from thermal runaway and thermally-induced Hi-Rel processing available secondary breakdown. Applications Supertex's vertical DMOS FETs are ideally suited to a wide Motor controls range of switching and amplifying applications where very Converters low threshold voltage, high breakdown voltage, high input Amplifiers impedance, low input capacitance, and fast switching Switches speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information BVDSS/BVDGS RDS(ON) ID(ON) Device Package (max) (min)