Supertex 2n6660 2n6661 free download

File name 2n6660_2n6661.pdf

2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0 1.5A 2N6660 90V 4.0 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information. vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with Features the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- s Free from secondary breakdown ent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced s Low power drive requirement secondary breakdown. s Ease of paralleling Supertex's vertical DMOS FETs are ideally suited to a wide range s Low CISS and fast switching speeds of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast s Excellent thermal stability switching speeds are desired. s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Package Options Applications s Motor controls s Converters s Amplifiers s Switches s Power supply circu