Text preview for : stb4nc60.pdf part of ST stb4nc60 . Electronic Components Datasheets Active components Transistors ST stb4nc60.pdf



Back to : stb4nc60.pdf | Home

STB4NC60
N-CHANNEL 600V - 1.8 - 4.2A D2PAK
PowerMeshTMII MOSFET

TYPE VDSS RDS(on) ID

STB4NC60 600V < 2.2 4.2A
s TYPICAL RDS(on) = 1.8
s EXTREMELY HIGH dv/dt CAPABILITY 3
s 100% AVALANCHE TESTED 1
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED

DESCRIPTION
D2PAK
The PowerMESHTMII is the evolution of the first
generation of MESH OVERLAYTM. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM
ing edge for what concerns swithing speed, gate
charge and ruggedness.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS




ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage