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Descr: . Electronic Components Datasheets Active components Transistors ST stb4nc60.pdf
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stb4nc60.pdfSTB4NC60 N-CHANNEL 600V - 1.8 - 4.2A D2PAK PowerMeshTMII MOSFET TYPE VDSS RDS(on) ID STB4NC60 600V < 2.2 4.2A s TYPICAL RDS(on) = 1.8 s EXTREMELY HIGH dv/dt CAPABILITY 3 s 100% AVALANCHE TESTED 1 s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION D2PAK The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWI

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