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MMDT4401
SOT-363 Dual Transistor (NPN)
SOT-363
Features
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
MRKING:K2X
Maximum Ratings (TA = 25 unless otherwise specified)
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.6 A
PC Collector Power Dissipation 0.2 W
RJA Thermal Resistance. Junction to Ambient Air 625 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
NPN 4401 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100 A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 100 A, IC=0 6 V
Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 A
Collector cut-off current ICEO VCE= 35 V , IB=0 0.5 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A
hFE(1) VCE= 1V, IC= 0.1mA 20
hFE(2) VCE= 1V, IC= 1mA 40
DC current gain hFE(3) VCE= 1V, IC= 10mA 80
hFE(4) VCE= 1V, IC= 150mA 100 300
hFE(5) VCE= 2V, IC= 500mA 40
VCE(sat)1 IC=150 mA, IB= 15mA 0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=500 mA, IB= 50mA 0.75 V
VBE(sat)1 IC= 150 mA, IB= 15mA 0.75 0.95 V
Base-emitter saturation voltage
VBE(sat)2 IC= 500 mA, IB= 50mA 1.2 V
Transition frequency fT VCE= 10V,IC= 20mA,f=100MHz 250 MHz
Output Capacitance Cob VCB=5V, IE= 0,f=1MHz 6.5 pF
Delay time td VCC=30V, 15 nS
Rise time tr VBE=2V,IC=150mA ,IB1=15mA 20 nS
Storage time tS 225 nS
VCC=30V, IC=150mA,IB1=-IB2=15mA
Fall time tf 30 nS
MMDT4401
SOT-363 Dual Transistor (NPN)
Typical Characteristics
MMDT4401
SOT-363 Dual Transistor (NPN)