LGE mmdt4401 free download

File name mmdt4401.pdf

MMDT4401 SOT-363 Dual Transistor (NPN) SOT-363 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0.2 W RJA Thermal Resistance. Junction to Ambient Air 625 /W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 NPN 4401 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100 A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 100 A, IC=0 6 V Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 A Collector cut-off current ICEO VCE= 35 V , IB=0 0.5 A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A hFE(1) VCE= 1V, IC= 0.1mA 20 hFE(2) VCE= 1V, IC= 1mA 40 DC current gain hFE(3) VCE= 1V, IC= 10mA 80 hFE(4) VCE= 1V, IC= 150mA 100 300 hFE(5) VCE= 2V, IC= 500mA 40 VCE(sat)1 IC=150 mA, IB= 15mA 0.4 V Collector-emitter saturation voltage