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BC856
BC857
BC858
PNP Silicon Planar Epitaxial Transistors
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Unit: inch (mm)
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
DESCRIPTION SYMBOL BC856 BC857 BC858 UNITS
Collector Base Voltage VCBO 80 50 30 V
Collector Emmitter Voltage (+VBE = 1V) VCEX 80 50 30 V
Collector Emitter Voltage VCEO 65 45 30 V
Emitter Base Voltage VEBO 5 V
Collector Current (DC) IC 100
mA
Collector Current - Peak ICM 200
Emitter Current - Peak IEM 200 mA
Base Current - Peak IBM 200 mA
Total power dissipation up to
Ptot** 250 mW
Tamb = 60 oC
o
Storge Temperature Tstg -55 to +150 C
o
Junction Temperature Tj 150 C
Thermal Resistance
From junction to tab Rth(j-t) 60
From tab to soldering points Rth(t-s) 280 K/W
From soldering points to ambient Rth(s-a)** 90
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
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BC856
BC857
BC858
Electrical Characteristics (at Ta=25 oC unless otherwise specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS
Collector Cut Off Current VCB = 30V, IE = 0 15 nA
ICBO o
VCB = 30V, IE = 0, Tj = 150 C 4 uA
Base Emitter On Voltage IC = 2mA, VCE = 5V 0.6 0.75
VBE(on)* V
IC = 10mA, VCE = 5V 0.82
Collector Emitter Saturation Voltage IC = 10mA, IB = 0.5mA 0.30
VCE(Sat) V
IC = 100mA, IB = 5mA 0.65
Base Emitter Saturation Voltage IC = 10mA, IB = 0.5mA 0.7
VBE(Sat)*** V
IC = 100mA, IB = 5mA 0.85
Knee Voltage IC = 10mA, -IB = Value for which 0.60
VCEK V
IC = 11mA at -VCE = 1V
DC Current Gain IC = 2mA, VCE = 5V
BC856 125 475
BC857/BC858 125 800
hFE
BC856A/BC857A/BC858A 125 250
BC856B/BC857B/BC858B 220 475
BC857C/BC858C 420 800
Collector Capacitance CC IE = ie = 0, VCB = 10V, f = 1MHZ 4.5 pF
Transition Frequency fT IC = 10mA, VCB = 5V, f = 100MHZ 100 MHZ
Small Signal Current Gain IC = 2mA, VCE = 5V, f= 1kHZ
| hfe | BC856 125 500
BC857/BC858 125 800
Noise Figure NF IC = 0.2mA, VCE = 5V 10 dB
RS= 2k ohm, f = 1KHZ, B= 200HZ
*VBE (on) decreases by about 2mV/K with increase temperature.
***VBE (Sat) decreases by about 1.7mV/K with increase temperature.
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