RCA bc856-bc857-bc858 free download

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BC856 BC857 BC858 PNP Silicon Planar Epitaxial Transistors Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit: inch (mm) Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION SYMBOL BC856 BC857 BC858 UNITS Collector Base Voltage VCBO 80 50 30 V Collector Emmitter Voltage (+VBE = 1V) VCEX 80 50 30 V Collector Emitter Voltage VCEO 65 45 30 V Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 100 mA Collector Current - Peak ICM 200 Emitter Current - Peak IEM 200 mA Base Current - Peak IBM 200 mA Total power dissipation up to Ptot** 250 mW Tamb = 60 oC o Storge Temperature Tstg -55 to +150 C o Junction Temperature Tj 150 C Thermal Resistance From junction to tab Rth(j-t) 60 From tab to soldering points Rth(t-s) 280 K/W From soldering points to ambient Rth(s-a)** 90 **Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm www.rectron.com 1 of 2 BC856