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SGS125
SILICON PNP POWER DARLINGTON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s PNP DARLINGTON
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
s GENERAL PURPOSE SWITCHING
DESCRIPTION
3
The SGS125 is a silicon epitaxial-base PNP 2
1
transistor in monolithic Darlington configuration in
SOT82 plastic package, intented for use in power
linear and switching applications. SOT-82
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. 5 K R2 Typ. 150 K
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) - 60 V
V CEO Collector-Emitter Voltage (I B = 0) - 60 V
V EBO Base-Emitter Voltage (I C = 0) -5 V
IC Collector Current -5 A
I CM Collector Peak Current -8 A
IB Base Current - 0.1 A
P tot Total Power Dissipation at T case 25 o C 65 W
T amb 25 o C 2 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max Operating Junction Temperature 150 C
June 1997 1/4
SGS125
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.92 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEO Collector Cut-off V CE = - 30 V - 0.5 mA
Current (I B = 0)
I CBO Collector Cut-off V CB = - 60 V - 0.2 mA
Current (I E = 0)
I EBO Emitter Cut-off Current V EB = - 5 V -2 mA
(I C = 0)
VCEO(sus) * Collector-Emitter I C = - 30 mA - 60 V
Sustaining Voltage
(I B = 0)
V CE(sat) * Collector-Emitter IC = - 3 A I B = -12 mA -2 V
Saturation Voltage IC = - 5 A I B = - 20 mA -4 V
V BE(on) * Base-Emitter Voltage IC = - 3 A V CE = - 3 V - 2.5 V
h FE * DC Current Gain I C = - 0.5 A V CE = - 3 V 1000
IC = - 3 A V CE = - 3 V 1000
2/4
SGS125
SOT-82 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.444
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.04 0.106
c1 1.0 1.3 0.039 0.05
D 15.4 16 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
H 2.54 0.100
H2 2.15 0.084
C A
F
B
H2
H
D
c1 e
b b1
e3
P032A
3/4
SGS125
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.