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SGS125 SILICON PNP POWER DARLINGTON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s PNP DARLINGTON s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION s GENERAL PURPOSE SWITCHING DESCRIPTION 3 The SGS125 is a silicon epitaxial-base PNP 2 1 transistor in monolithic Darlington configuration in SOT82 plastic package, intented for use in power linear and switching applications. SOT-82 INTERNAL SCHEMATIC DIAGRAM R1 Typ. 5 K R2 Typ. 150 K ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) - 60 V V CEO Collector-Emitter Voltage (I B = 0) - 60 V V EBO Base-Emitter Voltage (I C = 0) -5 V IC Collector Current -5 A I CM Collector Peak Current -8 A IB Base Current - 0.1 A P tot Total Power Dissipation at T case 25 o C 65 W T amb 25 o C 2 W o T stg Storage Temperature -65 to 150 C o Tj Max Operating Junction Temperature 150 C June 1997 1/4 SGS125 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.92 C/W o R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEO Collector Cut-off V CE = - 30 V