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2SB766A
PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free 1. BASE
2. COLLECTOR
3. EMITTER 1
2
3
SOT-89
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current -Continuous IC -1 A
Collector Power dissipation PC 500 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -60 - - V
Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -50 - - V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 - - V
Collector cut-off current ICBO VCB=-20V, IE=0 - - -0.1 A
Emitter cut-off current IEBO VEB=-4V, IC=0 - - -0.1 A
DC current gain hFE1 VCE=-10V, IC=-500mA 85 - 340
DC current gain hFE2 VCE=-5V, IC=-1A 50 - -
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA - -0.2 -0.4 V
Collector-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V
Transition frequency fT VCE=-10V, IC=-50mA, f=200MHz - 200 - MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 20 30 pF
CLASSIFICATION OF hFE
Rank Q R S
Range 85-170 120-240 170-340
Marking BQ BR BS
WEITRON 1/3 26-Dec-08
http://www.weitron.com.tw
2SB766A
WEITRON 2/3 26-Dec-08
http://www.weitron.com.tw
2SB766A
SOT-89 Outline Dimensions unit:mm
SOT-89
E Dim Min Max
G A A 1.400 1.600
B 0.320 0.520
C 0.360 0.560
H
D 0.350 0.440
J C E 4.400 4.600
G 1.400 1.800
H 2.300 2.600
B D J
K
3.940 4.250
K 1.500TYP
L
L 2.900 3.100
WEITRON 3/3 26-Dec-08
http://www.weitron.com.tw