Wietron 2sb766a free download

File name 2sb766a.pdf

2SB766A PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1 A Collector Power dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -60 - - V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -50 - - V Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 - - V Collector cut-off current ICBO VCB=-20V, IE=0 - - -0.1 A Emitter cut-off current IEBO VEB=-4V, IC=0 - - -0.1 A DC current gain hFE1 VCE=-10V, IC=-500mA 85 - 340 DC current gain hFE2 VCE=-5V, IC=-1A 50 - - Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA - -0.2 -0.4 V Collector-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V Transition frequency fT VCE=-10V, IC=-50mA, f=200MHz - 200 - MHz Collector output capacitance