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2SD716 SILICON EPITAXIAL PLANAR TRANSISTOR
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA TO-3P(I)D
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 100 V
VCEO Collector-emitter voltage (open base) - 100 V
IC Collector current (DC) - 6 A
ICM Collector current peak value - A
Ptot Total power dissipation Tmb 25 - 60 W
VCEsat Collector-emitter saturation voltage IC = 3.0A; IB = 0.3A - 2 V
VF Diode forward voltage IF = 3.0A 1.5 2.0 V
tf Fall time - s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 100 V
VCEO Collector-emitter voltage (open base) - 100 V
VEBO Emitter-base oltage (open colloctor) 5 V
IC Collector current (DC) - 6 A
IB Base current (DC) - 1.5 A
Ptot Total power dissipation Tmb 25 - 60 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
ICBO Collector-base cut-off current VCB=100V - 0.2 mA
IEBO Emitter-base cut-off current VEB=5V - 0.2 mA
V(BR)CEO Collector-emitter breakdown voltage IC=1mA 100 V
VCEsat Collector-emitter saturation voltages IC = 3.0A; IB = 0.3A - 2 V
hFE DC current gain IC = 1A; VCE = 5V 50 250
fT Transition frequency at f = 5MHz IC = 1A; VCE = 12V 12 - MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 150 pF
ton On times us
ts Tum-off storage time us
tf Fall time us
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: [email protected]