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2SD716 SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA TO-3P(I)D SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 100 V VCEO Collector-emitter voltage (open base) - 100 V IC Collector current (DC) - 6 A ICM Collector current peak value - A Ptot Total power dissipation Tmb 25 - 60 W VCEsat Collector-emitter saturation voltage IC = 3.0A; IB = 0.3A - 2 V VF Diode forward voltage IF = 3.0A 1.5 2.0 V tf Fall time - s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 100 V VCEO Collector-emitter voltage (open base) - 100 V VEBO Emitter-base oltage (open colloctor) 5 V IC Collector current (DC) - 6 A IB Base current (DC) - 1.5 A Ptot Total power dissipation Tmb 25 - 60 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT ICBO Collector-base cut-off current VCB=100V - 0.2 mA IEBO Emitter-base cut-off current VEB=5V - 0.2 mA V(BR)CEO Collector-emitter breakdown voltage IC=1mA 100 V VCEsat Collector