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PHB45NQ15T
N-channel TrenchMOS standard level FET
Rev. 02 -- 2 February 2009 Product data sheet



1. Product profile

1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.

1.2 Features and benefits
Higher operating power due to low Simple gate drive required due to low
thermal resistance gate charge
Low conduction losses due to low Suitable for high frequency
on-state resistance applications due to fast switching
characteristics

1.3 Applications
AC-to-DC secondary side rectification DC-to-DC converters

1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25