Philips phb45nq15t free download

File name phb45nq15t.pdf

PHB45NQ15T N-channel TrenchMOS standard level FET Rev. 02 -- 2 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Simple gate drive required due to low thermal resistance gate charge Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications AC-to-DC secondary side rectification DC-to-DC converters 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj 25