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2SC2668
TO-92S Transistor (NPN)

1. EMITTER TO-92S

2. COLLECTOR

123 3. BASE

Features
Small reverse transfer capacitance
Low Noise Figure

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 20 mA Dimensions in inches and (millimeters)
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC =100A, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 4 V

Collector cut-off current ICBO VCB=40V, IE=0 0.5 A

Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A

DC current gain hFE VCE=6V, IC=1mA 40 200
Reverse Transfer Capacitance Cre VCE=6V, f=1MHz 0.7 pF

Collector-Base Time Constant Cc