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2SC2668 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 123 3. BASE Features Small reverse transfer capacitance Low Noise Figure MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =100A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 4 V Collector cut-off current ICBO VCB=40V, IE=0 0.5 A Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A DC current gain hFE VCE=6V, IC=1mA 40 200 Reverse Transfer Capacitance Cre VCE=6V, f=1MHz 0.7 pF Collector-Base Time Constant Cc