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KST10/11 NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSITOR
TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
&
Emitter-Base Voltage VEBO 3.0 V
PC 350 mW
&
Collector Dissipation (Ta=25 )
Derate above 25& mW/
&
2.8
Collector Dissipation (Ta=25 )
&
W
&
PC 1.0
Derate above 25 W/
Junction Temperature
8.0
&
Storage Temperature TJ 150
&
Thermal Resistance, Junction to Case
T STG -55~150
&/W
Thermal Resistance, Junction to Ambient
Rth(j-c)
Rth(j-a)
125
357 &/W
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25 )
Characteristic Symbol Test Conditions Min Max Unit
Collector-Baser Breakdown Voltage BVCBO }
IC=100 , IE=0 30 V
}
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 25 V
Emitter-Base Breakdown Voltage BVEBO IE=10 , IC=0 3.0 V
Collector Cut-off Current ICBO VCB=25V, IE=0 100 nA
Emitter Cut-off Current IEBO VEB=2V, IC=0 100 nA
DC Current Gain hFE VCE=10V, IC=4mA 60
Collector-Emitter Saturation Voltage VCE (sat) IC=4mA, IB=0.4mA 0.5 V
Base-Emitter On Voltage VBE (sat) VCE=10V, IC=4mA 0.95 V
Current Gain Bandwidth Product CCB VCE=10V, IC=4mA 650 MHz
Collector Base Capacitance CRB VCB=10V, IE=0, f=1MHz 0.7 pF
VCB=10V, IE=0, f=1MHz