Samsung ksp10 free download

File name ksp10.pdf

KST10/11 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSITOR TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V & Emitter-Base Voltage VEBO 3.0 V PC 350 mW & Collector Dissipation (Ta=25 ) Derate above 25& mW/ & 2.8 Collector Dissipation (Ta=25 ) & W & PC 1.0 Derate above 25 W/ Junction Temperature 8.0 & Storage Temperature TJ 150 & Thermal Resistance, Junction to Case T STG -55~150 &/W Thermal Resistance, Junction to Ambient Rth(j-c) Rth(j-a) 125 357 &/W 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Conditions Min Max Unit Collector-Baser Breakdown Voltage BVCBO } IC=100 , IE=0 30 V } Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 25 V Emitter-Base Breakdown Voltage BVEBO IE=10 , IC=0 3.0 V Collector Cut-off Current ICBO VCB=25V, IE=0 100 nA Emitter Cut-off Current