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Electronic components, integrated circuits, semiconductor - datasheets and schematics| File information: | |
| File name: | ksp10.pdf [preview ksp10] |
| Size: | 80 kB |
| Extension: | |
| Mfg: | Samsung |
| Model: | ksp10 🔎 |
| Original: | ksp10 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors Samsung ksp10.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 13-07-2020 |
| User: | Anonymous |
| Multipart: | No multipart |
| Information about the files in archive: | ||
| Decompress result: | OK | |
| Extracted files: | 1 | |
File name ksp10.pdf KST10/11 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSITOR TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V & Emitter-Base Voltage VEBO 3.0 V PC 350 mW & Collector Dissipation (Ta=25 ) Derate above 25& mW/ & 2.8 Collector Dissipation (Ta=25 ) & W & PC 1.0 Derate above 25 W/ Junction Temperature 8.0 & Storage Temperature TJ 150 & Thermal Resistance, Junction to Case T STG -55~150 &/W Thermal Resistance, Junction to Ambient Rth(j-c) Rth(j-a) 125 357 &/W 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Conditions Min Max Unit Collector-Baser Breakdown Voltage BVCBO } IC=100 , IE=0 30 V } Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 25 V Emitter-Base Breakdown Voltage BVEBO IE=10 , IC=0 3.0 V Collector Cut-off Current ICBO VCB=25V, IE=0 100 nA Emitter Cut-off Current | ||
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