Text preview for : 2sa562.pdf part of LGE 2sa562 . Electronic Components Datasheets Active components Transistors LGE 2sa562.pdf



Back to : 2sa562.pdf | Home

2SA562(PNP)
TO-92 Bipolar Transistors

TO-92
1. EMITTER

2. COLLECTOR

3. BASE




Features
Excellent hFE linearlity




Dimensions in inches and (millimeters)


MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -35 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 500 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= -100A , IE=0 -35 V

Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -30 V

Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V

Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 A

Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A

DC current gain hFE VCE=-1V, IC=-100mA 70 240

Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB= -10mA -0.25 V

Base-emitter voltage VBE VCE=-1V,IC=-100mA -1 V

Transition frequency fT VCE= -6V, IC= -20mA 200 MHz

Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 13 pF


CLASSIFICATION OF hFE
Rank O Y

Range 70-140 120-240
2SA562(PNP)
TO-92 Bipolar Transistors


Typical Characteristics