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2SA562(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 500 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A , IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A DC current gain hFE VCE=-1V, IC=-100mA 70 240 Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB= -10mA -0.25 V Base-emitter voltage VBE VCE=-1V,IC=-100mA -1