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UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING
TRANSISTOR

FEATURES
* High Collector-Emitter Voltage:
VCEO=160V
*High current gain
1
APPLICATIONS
*Telephone switching circuit
*Amplifier

TO-92




1:EMITTER 2:BASE 3:COLLECTOR


ABSOLUTE MAXIMUM RATINGS ( Ta=25