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UTC

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2n5551

Original Chassis:2n5551
Descr: . Electronic Components Datasheets Active components Transistors UTC 2n5551.pdf
Group:Electronics > Components > Transistors >
Uploaded:2020-07-14 08:42:12
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2n5551.pdfUTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25

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