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A92(PNP)
TO-92 Bipolar Transistors
1.
TO-92
EMITTER
2. BASE
3. COLLECTOR
Features
High voltage
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -300 V
VCEO Collector-Emitter Voltage -300 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters)
PC Collector Power Dissipation 625 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
RJA Thermal Resistance, junction to Ambient 200 /mW
RJC Thermal Resistance, unction to Case 83.3 /mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -300 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -300 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB= -200 V IE=0 -0.25 A
Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 A
hFE(1) VCE= -10 V, IC=- 1 mA 60
DC current gain hFE(2) VCE= -10V, IC = -10 mA 80 250
hFE(3) VCE= -10 V, IC= -80 mA 60
Collector-emitter saturation voltage VCE(sat) IC= -20 mA, IB= -2 mA -0.2 V
Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2 mA -0.9 V
VCE= -20 V, IC= -10 mA
Transition frequency fT 50 MHz
f = 30MHz
CLASSIFICATION OF hFE(2)
Rank A B1 B2 C
Range 80-100 100-150 150-200 200-250
A92(PNP)
TO-92 Bipolar Transistors