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A92(PNP) TO-92 Bipolar Transistors 1. TO-92 EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 RJA Thermal Resistance, junction to Ambient 200 /mW RJC Thermal Resistance, unction to Case 83.3 /mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB= -200 V IE=0 -0.25 A Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 A hFE(1) VCE= -10 V, IC=- 1 mA 60 DC current gain hFE(2) VCE= -10V, IC = -10 mA 80 250 hFE(3) VCE= -10 V, IC= -80 mA 60 Collector-emitter saturation voltage VCE(sat) IC= -20 mA, IB= -2 mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2 mA -0.9 V VCE=