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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG410W
NPN 22 GHz wideband transistor
Product specification 1998 Mar 11
Supersedes data of 1997 Oct 29
NXP Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
FEATURES PINNING
Very high power gain PIN DESCRIPTION
Low noise figure 1 emitter
High transition frequency 2 base
Emitter is thermal lead 3 emitter
Low feedback capacitance. 4 collector
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular handbook, halfpage 3 4
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Pagers
Satellite television tuners (SATV) 2 1
High frequency oscillators. Top view MSB842
DESCRIPTION Marking code: P4.
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin Fig.1 Simplified outline SOT343R.
dual-emitter SOT343R package.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 10 V
VCEO collector-emitter voltage open base 4.5 V
IC collector current (DC) 10 12 mA
Ptot total power dissipation Ts 110 C 54 mW
hFE DC current gain IC = 10 mA; VCE = 2 V; Tj = 25 C 50 80 120
Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz 45 fF
fT transition frequency IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 22 GHz
Gmax maximum power gain IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 21 dB
F noise figure IC = 1 mA; VCE = 2 V; f = 2 GHz; S = opt 1.2 dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1998 Mar 11 2
NXP Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 10 V
VCEO collector-emitter voltage open base 4.5 V
VEBO emitter-base voltage open collector 1 V
IC collector current (DC) 12 mA
Ptot total power dissipation Ts 110 C; note 1; see Fig.2 54 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 750 K/W
MGD960
60
handbook, halfpage
Ptot
(mW)
40
20
0
0 40 80 120 160
Ts (