Philips bfg410w free download

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DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1 emitter High transition frequency 2 base Emitter is thermal lead 3 emitter Low feedback capacitance. 4 collector APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular handbook, halfpage 3 4 telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers Satellite television tuners (SATV) 2 1 High frequency oscillators. Top view MSB842 DESCRIPTION Marking code: P4. NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin Fig.1 Simplified outline SOT343R. dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 10 V VCEO collector-emitter voltage open base 4.5 V IC collector current (DC) 10 12 mA Ptot total power dissipation Ts 110 C 54 mW hFE DC current gain IC = 10 mA; VCE = 2 V; Tj = 25 C 50 80 120 Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz 45 fF fT transition frequency IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 22 GHz Gmax maximum power gain IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 21 dB F noise figure IC = 1 mA; VCE = 2 V; f = 2 GHz; S = opt 1.2