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2SA950(PNP)
TO-92 Bipolar Transistors

TO-92
1. EMITTER

2. COLLECTOR

3. BASE




Features
1W output applications
complementary to 2SC2120

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -35 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous -0.8 A
PC Collector Power Dissipation 0.6 W
Tj Junction Temperature 150
Tstg Storage Temperature -55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= -0.1mA , IE=0 -35 V

Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V

Emitter-base breakdown voltage V(BR)EBO IE= -0.1mA, IC=0 -5 V

Collector cut-off current ICBO VCB= -35V, IE=0 -0.1 A

Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A

hFE(1) VCE=-1V, IC=-100mA 100 320
DC current gain
hFE(2) VCE=-1V, IC= -700mA 35

Collector-emitter saturation voltage VCE(sat) IC= -500mA, IB= -20mA -0.7 V

Emitter-base voltage VBE VCE=-1V, IC=-10mA -0.5 -0.8 V

VCB=-10V,IE=0
Collector Output Capacitance Cob 19 pF
f=1MHz

Transition frequency fT VCE=-5V,IC=-10mA 120 MHz

CLASSIFICATION OF hFE(1)
Rank O Y

Range 100-200 160-320
2SA950(PNP)
TO-92 Bipolar Transistors


Typical Characteristics