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2SA950(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -0.8 A PC Collector Power Dissipation 0.6 W Tj Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -0.1mA , IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -0.1mA, IC=0 -5 V Collector cut-off current ICBO VCB= -35V, IE=0 -0.1 A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A hFE(1) VCE=-1V, IC=-100mA 100 320 DC current gain hFE(2) VCE=-1V, IC= -700mA 35 Collector-emitter saturation voltage VCE(sat) IC= -500mA, IB= -20mA -0.7 V Emitter-base voltage VBE VCE=-1V, IC=-10mA -0.5 -0.8 V VCB=-10V,IE=0 Collector Output Capacitance Cob 19 pF f=1MHz Transition fre