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TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/472
Devices Qualified Level
JAN
2N6350 2N6351 2N6352 2N6353 JANTX
JANTXV
MAXIMUM RATINGS
2N6350 2N6351
Ratings Symbol Units
2N6352 2N6353
Collector-Emitter Voltage VCER 80 150 Vdc
Collector-Base Voltage VCBO 80 150 Vdc
12 Vdc
Emitter-Base Voltage VEBO
6.0 Vdc
Base Current IB 0.5 Adc
5.0 Adc
Collector Current IC
10(1) Adc 2N6350, 2N6351
2N6350 2N6352 TO-33*
2N6351 2N6353
Total Power Dissipation @ TA = 250C 1.0(2) 2.0(4) W
PT
@ TC = 1000C 5.0 (3)
25(5) W
Operating & Storage Junction Temperature Range 0
TJ, Tstg -65 to +200 C
THERMAL CHARACTERISTICS
2N6350 2N6352
Characteristics Symbol Unit
2N6351 2N6353
0
Thermal Resistance, Junction-to-Case RJC 20 4.0 C/W
1) Applies for tp 10 ms, Duty cycle 50%
2N6352, 2N6353
2) Derate linearly @ 5.72 mW/0C above TA > 250C
3) Derate linearly @ 50 mW/0C above TC > 1000C TO-24* (TO-213AA)
4) Derate linearly @ 11.4 mW/0C above TA > 250C
5) Derate linearly @ 250 mW/0C above TC > 1000C
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 25 mAdc, RB1E = 2.2 k, RB2E = 100 2N6350, 2N6352 V(BR)CER 80 Vdc
2N6351, 2N6353 150
6 Lake Street, Lawrence, MA 01841 120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics Symbol Min. Max. Unit
Emitter-Base Breakdown Voltage
IEB = 12 mAdc, Base 1 Open V(BR)EBO 6.0 Vdc
IEB = 12 mAdc, Base 2 Open 12
Collector-Emitter Cutoff Current
VEB1 = 2.0 Vdc, RB2E = 100 , VCE = 80 Vdc 2N6350, 2N6352 ICEX 1.0