Microsemi 2n6350-53 free download

File name 2n6350-53.pdf

TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level JAN 2N6350 2N6351 2N6352 2N6353 JANTX JANTXV MAXIMUM RATINGS 2N6350 2N6351 Ratings Symbol Units 2N6352 2N6353 Collector-Emitter Voltage VCER 80 150 Vdc Collector-Base Voltage VCBO 80 150 Vdc 12 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current IB 0.5 Adc 5.0 Adc Collector Current IC 10(1) Adc 2N6350, 2N6351 2N6350 2N6352 TO-33* 2N6351 2N6353 Total Power Dissipation @ TA = 250C 1.0(2) 2.0(4) W PT @ TC = 1000C 5.0 (3) 25(5) W Operating & Storage Junction Temperature Range 0 TJ, Tstg -65 to +200 C THERMAL CHARACTERISTICS 2N6350 2N6352 Characteristics Symbol Unit 2N6351 2N6353 0 Thermal Resistance, Junction-to-Case RJC 20 4.0 C/W 1) Applies for tp 10 ms, Duty cycle 50% 2N6352, 2N6353 2) Derate linearly @ 5.72 mW/0C above TA > 250C 3) Derate linearly @ 50 mW/0C above TC > 1000C TO-24* (TO-213AA) 4) Derate linearly @