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BCP51,52,53
SOT-223 Transistor(PNP)
SOT-223
1. BASE
2. COLLECTOR
1
3. EMITTER

Features
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54...BCP56 (NPN)

MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)

Symbol Parameter BCP51 BCP52 BCP53 Units
VCBO Collector-Base Voltage -45 -60 -100 V
VCEO Collector-Emitter Voltage -45 -60 -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 1.5 W
RJA Thermal Resistance Junction to Ambient 94 /W
Tstg Storage Temperature Range -65to+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage BCP51 -45
BCP52 V(BR)CBO IC=- 0.1mA,IE=0 -60 V
BCP53 -100
Collector-emitter breakdown voltage BCP51 -45
BCP52 V(BR)CEO IC= -10mA,IB=0 -60 V
BCP53 -80

Base-emitter breakdown voltage V(BR)EBO IC= -10A,IE=0 -5 V

Collector cut-off current ICBO VCB= -30 V, IE=0 -100 nA

hFE(1) VCE=-2V, IC=-5mA 25

DC current gain hFE(2) VCE= -2V, IC=-150m A 63 250

hFE(3) VCE= -2V, IC=-500m A 25

Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.5 V

Base-emitter voltage VBE VCE=-2V, IC=-500m A -1 V

Transition frequency fT VCE=-10V,IC=-50mA,f=100MHz 100 MHz

CLASSIFICATION OF hFE(2)
Rank BCP51-10, BCP52-10, BCP53-10 BCP51-16, BCP52-16, BCP53-16
Range 63-160 100-250
BCP51,52,53
SOT-223 Transistor(PNP)

Typical Characteristics
BCP51,52,53
SOT-223 Transistor(PNP)