LGE bcp51-52-53 free download

File name bcp51-52-53.pdf

BCP51,52,53 SOT-223 Transistor(PNP) SOT-223 1. BASE 2. COLLECTOR 1 3. EMITTER Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter BCP51 BCP52 BCP53 Units VCBO Collector-Base Voltage -45 -60 -100 V VCEO Collector-Emitter Voltage -45 -60 -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 1.5 W RJA Thermal Resistance Junction to Ambient 94 /W Tstg Storage Temperature Range -65to+150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage BCP51 -45 BCP52 V(BR)CBO IC=- 0.1mA,IE=0 -60 V BCP53 -100 Collector-emitter breakdown voltage BCP51 -45 BCP52 V(BR)CEO IC= -10mA,IB=0 -60 V BCP53 -80 Base-emitter breakdown voltage V(BR)EBO IC= -10A,IE=0 -5 V Collector cut-off current ICBO VCB= -30 V, IE=0 -100 nA hFE(1) VCE=-2V, IC=-5mA 25 DC current gain hFE(2) VCE= -2V, IC=-150m A 63 250