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STB19NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESHTM MOSFET
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STB19NB20 200 V < 0.180 19 A

s TYPICAL RDS(on) = 0.150
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED 3
1
s EXTREMELY HIGH dv/dt CAPABILITY
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE D2PAK
TO-263
DESCRIPTION (Suffix "T4")
Using the latest high voltage MESH
OVERLAYTM process, SGS-Thomson has
designed an advanced family of Power
MOSFETs with outstanding performance. The
new patent pending strip layout coupled with the
Company's proprietary edge termination
structure, gives the lowest RDS(on) per area, INTERNAL SCHEMATIC DIAGRAM
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching
characteristics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE R E

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 200 V
VDGR Drain- gate Voltage (R GS = 20 k) 200 V
V GS Gate-source Voltage