ST stb19n20 free download

File name stb19n20.pdf

STB19NB20 N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STB19NB20 200 V < 0.180 19 A s TYPICAL RDS(on) = 0.150 s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED 3 1 s EXTREMELY HIGH dv/dt CAPABILITY s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK TO-263 DESCRIPTION (Suffix "T4") Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, INTERNAL SCHEMATIC DIAGRAM exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE R E ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 200 V VDGR Drain- gate Voltage (R GS = 20 k) 200 V V GS Gate-source Voltage